FGAF40N60UFDTU

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Manufacturer part number:FGAF40N60UFDTU

Manufacturer:ON Semiconductor

Description:FGAF40N60UFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGAF40N60UFDTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 4 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Number of Pins	3
Weight	6.962g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Voltage - Rated DC	600V
Max Power Dissipation	100W
Current Rating	40A
Number of Elements	1
Element Configuration	Single
Power Dissipation	100W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
Reverse Recovery Time	95 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	3.1V
Turn On Time	67 ns
Test Condition	300V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 20A
Turn Off Time-Nom (toff)	190 ns
Gate Charge	77nC
Current - Collector Pulsed (Icm)	160A
Td (on/off) @ 25°C	15ns/65ns
Switching Energy	470μJ (on), 130μJ (off)
Height	26.5mm
Length	15.5mm
Width	5.5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free