FGD5T120SH datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGD5T120SH Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
260.37mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Max Power Dissipation
69W
Peak Reflow Temperature (Cel)
245
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Power - Max
69W
Collector Emitter Voltage (VCEO)
3.6V
Max Collector Current
10A
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2.9V
Max Breakdown Voltage
1.2kV
Test Condition
600V, 5A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3.6V @ 15V, 5A
IGBT Type
Trench Field Stop
Gate Charge
6.7nC
Current - Collector Pulsed (Icm)
12.5A
Td (on/off) @ 25°C
4.8ns/24.8ns
Switching Energy
247μJ (on), 94μJ (off)
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FGD5T120SH Product Details
FGD5T120SH Description
The FGD5T120SH uses innovative field cutoff trench IGBT technology, ON Semiconductor's new family of field cutoff trench IGBTs to provide optimal performance for hard-switching applications such as solar inverters, UPS, welding machines, and PFC.
FGD5T120SH Features
1200V, 5A FS trench technology IGBT
Positive temperature coefficient
High-speed switching
Low saturation voltage: VCE(sat) = 2.9V at Ic=5A
High input impedance
Suitable for inrush current limitation, lighting, and home appliances