TIG058E8-TL-H

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Manufacturer part number:TIG058E8-TL-H

Manufacturer:ON Semiconductor

Description:TIG058E8-TL-H datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:TIG058E8-TL-H Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e6
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin/Bismuth (Sn/Bi)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
Element Configuration	Single
Input Type	Standard
Halogen Free	Halogen Free
Collector Emitter Voltage (VCEO)	400V
Max Collector Current	150A
Collector Emitter Breakdown Voltage	400V
Max Breakdown Voltage	400V
Vce(on) (Max) @ Vge, Ic	5.6V @ 4V, 100A
Height	900μm
Length	2.9mm
Width	2.3mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
1	$1.818197	$1.818197
10	$1.715280	$17.1528
100	$1.618189	$161.8189
500	$1.526593	$763.2965
1000	$1.440182	$1440.182

TIG058E8-TL-H Description

TIG058E8-TL-H is a 400v N-channel IGBT. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor TIG058E8-TL-H is in the ECH8 package.