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FGB20N60SFD

FGB20N60SFD

FGB20N60SFD

ON Semiconductor

FGB20N60SFD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGB20N60SFD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureLOW CONDUCTION LOSS
HTS Code8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation208W
Terminal FormGULL WING
Base Part Number FGB20N60
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation83W
Case Connection COLLECTOR
Input Type Standard
Power - Max 208W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Reverse Recovery Time 34 ns
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.8V
Max Breakdown Voltage 600V
Turn On Time28 ns
Test Condition 400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A
Turn Off Time-Nom (toff) 123 ns
IGBT Type Field Stop
Gate Charge65nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 13ns/90ns
Switching Energy 370μJ (on), 160μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 48ns
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:1860 items

Pricing & Ordering

QuantityUnit PriceExt. Price
800$2.42818$1942.544

FGB20N60SFD Product Details

FGB20N60SFD Description


Using the new field-stop IGBT technology, on Semiconductor's field-stop IGBT provides the best performance for solar inverters, UPS, welders and PFC applications, which are critical for low turn-on and switching losses.

FGB20N60SFDFeatures

High current capability

Low saturation voltage: VCE(sat) =2.2V @ IC = 20A

High input impedance

Fast switching: EOFF =8uJ/A

RoHS compliant

FGB20N60SFDApplications

Other Industrial


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