FGB20N60SFD

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Manufacturer part number:FGB20N60SFD

Manufacturer:ON Semiconductor

Description:FGB20N60SFD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGB20N60SFD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	208W
Terminal Form	GULL WING
Base Part Number	FGB20N60
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	83W
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	208W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
Reverse Recovery Time	34 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.8V
Max Breakdown Voltage	600V
Turn On Time	28 ns
Test Condition	400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 20A
Turn Off Time-Nom (toff)	123 ns
IGBT Type	Field Stop
Gate Charge	65nC
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	13ns/90ns
Switching Energy	370μJ (on), 160μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	48ns
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant