FGD3050G2V datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGD3050G2V Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-40°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, EcoSPARK®
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Logic
Power - Max
150W
Voltage - Collector Emitter Breakdown (Max)
500V
Current - Collector (Ic) (Max)
32A
Vce(on) (Max) @ Vge, Ic
1.2V @ 4V, 6A
Gate Charge
22nC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.08000
$1.08
500
$1.0692
$534.6
1000
$1.0584
$1058.4
1500
$1.0476
$1571.4
2000
$1.0368
$2073.6
2500
$1.026
$2565
FGD3050G2V Product Details
FGD3050G2V Description
FGD3050G2V is a 500v N-Channel Ignition IGBT. The Onsemi FGD3050G2V can be applied in automotive ignition coil driver circuits, High Current Ignition systems, and coil-on-plug applications. The Operating and Storage Temperature Range is between -40 and 175℃. And the transistor FGD3050G2V is in the TO-252AA package with 150W power dissipation.
FGD3050G2V Features
SCIS Energy= 300mJ atTJ=25°C
Logic Level Gate Drive
RoHS Compliant
Collector Current Continuous, at TC = 110°C, VGE = 5.0V: 27A