APT30GP60BDQ1G

new-10%

Manufacturer part number:APT30GP60BDQ1G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247

Case Package:SOT-23

Datasheet:APT30GP60BDQ1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	POWER MOS 7®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Voltage - Rated DC	600V
Max Power Dissipation	463W
Current Rating	30A
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	463W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	100A
Collector Emitter Breakdown Voltage	600V
Turn On Time	31 ns
Test Condition	400V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 30A
Turn Off Time-Nom (toff)	165 ns
IGBT Type	PT
Gate Charge	90nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	13ns/55ns
Switching Energy	260μJ (on), 250μJ (off)
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free