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FGH40T65UPD

FGH40T65UPD

FGH40T65UPD

ON Semiconductor

FGH40T65UPD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGH40T65UPD Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 50 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 4 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 268W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 268W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 80A
Reverse Recovery Time 43 ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 57 ns
Test Condition 400V, 40A, 7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
Turn Off Time-Nom (toff) 213 ns
IGBT Type Trench Field Stop
Gate Charge 177nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 20ns/144ns
Switching Energy 1.59mJ (on), 580μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.5V
Fall Time-Max (tf) 22ns
Height 20.82mm
Length 15.87mm
Width 4.82mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.78000 $4.78
10 $4.31100 $43.11
450 $3.38411 $1522.8495
900 $3.05196 $2746.764
1,350 $2.59740 $2.5974
FGH40T65UPD Product Details

Description


The FGH40T65UPD is a 650 V, 40 A Field Stop Trench IGBT. ON Semiconductor's new series of field stop trench IGBTs uses novel field stop trench IGBT technology to provide optimum performance for solar inverters, UPS, welders, and digital power generators where low conduction and switching losses are critical.



Features


  • Tightened Parameter Distribution

  • Short Circuit Ruggedness > 5 μs @ 25°C

  • This Device is Pb?Free and is RoHS Compliant

  • Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 40 A

  • 100% of Parts Tested ILM

  • High Input Impedance

  • Maximum Junction Temperature: TJ = 175°C

  • Positive Temperature Co?efficient for Easy Parallel Operating

  • High Current Capability



Applications


  • Solar Inverter, UPS, Welder, Digital Power Generator

  • Telecom, ESS

  • AC and DC Motor Drives Offering Speed Control

  • Chopper and Inverters

  • Solar Inverters

  • SMPS (Switched Mode Power Supply)


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