FGH40T65UPD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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FGH40T65UPD Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
50 Weeks
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 4 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.39g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
HTS Code
8541.29.00.95
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
268W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
268W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
650V
Max Collector Current
80A
Reverse Recovery Time
43 ns
JEDEC-95 Code
TO-247AB
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
2.1V
Turn On Time
57 ns
Test Condition
400V, 40A, 7 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 40A
Turn Off Time-Nom (toff)
213 ns
IGBT Type
Trench Field Stop
Gate Charge
177nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
20ns/144ns
Switching Energy
1.59mJ (on), 580μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
7.5V
Fall Time-Max (tf)
22ns
Height
20.82mm
Length
15.87mm
Width
4.82mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.78000
$4.78
10
$4.31100
$43.11
450
$3.38411
$1522.8495
900
$3.05196
$2746.764
FGH40T65UPD Product Details
Description
The FGH40T65UPD is a 650 V, 40 A Field Stop Trench IGBT. ON Semiconductor's new series of field stop trench IGBTs uses novel field stop trench IGBT technology to provide optimum performance for solar inverters, UPS, welders, and digital power generators where low conduction and switching losses are critical.
Features
Tightened Parameter Distribution
Short Circuit Ruggedness > 5 μs @ 25°C
This Device is Pb?Free and is RoHS Compliant
Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 40 A
100% of Parts Tested ILM
High Input Impedance
Maximum Junction Temperature: TJ = 175°C
Positive Temperature Co?efficient for Easy Parallel Operating
High Current Capability
Applications
Solar Inverter, UPS, Welder, Digital Power Generator