STGYA120M65DF2AG Description

STGYA120M65DF2AG is an IGBT with a trench gate field stop construction developed by STGYA. The device is part of the M series of IGBTs, which provide an ideal blend of inverter system performance and efficiency in applications where low-loss and short-circuit functionality are critical. Furthermore, the VCE score is positive (sat) The tight parameter distribution and temperature coefficient result in safer paralleling operation.

STGYA120M65DF2AG Features

• Safer paralleling

• AEC-Q101 qualified

• Low thermal resistance

• Tight parameter distribution

• 6 μs of short-circuit withstand time

• VCE(sat) = 1.65 V (typ.) @ IC = 120 A

• Positive VCE(sat) temperature coefficient

• Soft and very fast recovery antiparallel diode

• Maximum junction temperature: TJ = 175 °C

STGYA120M65DF2AG Applications

• UPS

• PFC

• Motor control

• General-purpose inverters