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HGT1S10N120BNST

  • HGT1S10N120BNST
  • HGT1S10N120BNST

HGT1S10N120BNST

HGT1S10N120BNST

ON Semiconductor

HGT1S10N120BNST datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

HGT1S10N120BNST Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 298W
Terminal Form GULL WING
Current Rating 35A
Base Part Number HGT1S10N120
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 15ns
Element Configuration Single
Power Dissipation 298W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 35A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.7V
Max Breakdown Voltage 1.2kV
Turn On Time 32 ns
Test Condition 960V, 10A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Continuous Collector Current 55A
Turn Off Time-Nom (toff) 330 ns
IGBT Type NPT
Gate Charge 100nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 23ns/165ns
Switching Energy 320μJ (on), 800μJ (off)
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 200ns
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
800 $1.89606 $1516.848
1,600 $1.61366 $1.61366
2,400 $1.54125 $3.0825
HGT1S10N120BNST Product Details

HGT1S10N120BNST Description

HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The HGT1S10N120BNST IGBT is suited for a wide range of high-voltage switching applications that operate at moderate frequencies and require low conduction losses, such as UPS, solar inverters, motor control, and power supply.


HGT1S10N120BNST Features

  • 17A, 1200V, TC = 110°C

  • Low Saturation Voltage : V CE(sat) = 2.45 V @ I C = 10A

  • Typical Fall Time. . . . . . . . . .140ns at TJ = 150°C

  • Short Circuit Rating

  • Low Conduction Loss


HGT1S10N120BNST Applications

  • Uninterruptible Power Supply

  • High Voltage, the high current switching device

  • Induction Heating

  • Converters or Inverter circuits


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