APT150GN60LDQ4G

new-10%

Manufacturer part number:APT150GN60LDQ4G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Chip N-CH 600V 220A 3-Pin(3+Tab) TO-264

Case Package:SOT-23

Datasheet:APT150GN60LDQ4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1999
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	HIGH RELIABILITY
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	536W
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	536W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	220A
Collector Emitter Breakdown Voltage	600V
Turn On Time	154 ns
Test Condition	400V, 150A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 150A
Turn Off Time-Nom (toff)	575 ns
IGBT Type	Trench Field Stop
Gate Charge	970nC
Current - Collector Pulsed (Icm)	450A
Td (on/off) @ 25°C	44ns/430ns
Switching Energy	8.81mJ (on), 4.295mJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6.5V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free