FGY60T120SQDN Description

This insulated gate bipolar transistor (IGBT)FGY60T120SQDN features a rugged and cost-effective overfield stop groove structure that provides excellent performance in demanding switching applications, while providing low-state voltage and the lowest switching loss. IGBT is ideal for UPS and solar applications. The device integrates a soft and fast co-packaged free-follow-up diode with low forward voltage.

FGY60T120SQDN  Features

? Extremely Efficient Trench with Field Stop Technology

? Maximum Junction Temperature TJ = 175°C

? Low Saturation Voltage: VCE(sat) = 1.7 V (Typ.) @ IC = 60 A

? 100% of the Parts Tested for ILM (Note 1)

? Soft Fast Reverse Recovery Diode

? Optimized for High Speed Switching

? RoHS Compliant

FGY60T120SQDN  Applications

? Solar Inverter, UPS