FGY75N60SMD

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Manufacturer part number:FGY75N60SMD

Manufacturer:ON Semiconductor

Description:FGY75N60SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGY75N60SMD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 hours ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Number of Pins	3
Weight	7.629g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	750W
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	750W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	150A
Reverse Recovery Time	55 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.9V
Turn On Time	76 ns
Test Condition	400V, 75A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 75A
Turn Off Time-Nom (toff)	161 ns
IGBT Type	Field Stop
Gate Charge	248nC
Current - Collector Pulsed (Icm)	225A
Td (on/off) @ 25°C	24ns/136ns
Switching Energy	2.3mJ (on), 770μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	29ns
Height	20.32mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free