2SC4081UBTLR Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is essential to maintain the continuous collector voltage at 150mA to achieve high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.As a result, the part has a transition frequency of 180MHz.A breakdown input voltage of 50V volts can be used.Maximum collector currents can be below 150mA volts.

2SC4081UBTLR Features

the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 180MHz

2SC4081UBTLR Applications

There are a lot of ROHM Semiconductor 2SC4081UBTLR applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting