FJB102TM Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 3A 4V.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.There is a breakdown input voltage of 100V volts that it can take.In extreme cases, the collector current can be as low as 8A volts.

FJB102TM Features

the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A

FJB102TM Applications

There are a lot of ON Semiconductor FJB102TM applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter