BD543B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD543B-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2W
Base Part Number
BD543
Polarity
NPN
Power - Max
2W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 5A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
1V @ 1.6A, 8A
Collector Emitter Breakdown Voltage
80V
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
8A
Collector Base Voltage (VCBO)
80V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BD543B-S Product Details
BD543B-S Overview
DC current gain in this device equals 15 @ 5A 4V, which is the ratio of the base current to the collector current.When VCE saturation is 1V @ 1.6A, 8A, transistor means Ic has reached transistors maximum value (saturated).The product comes in the supplier device package of TO-220.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.In extreme cases, the collector current can be as low as 8A volts.
BD543B-S Features
the DC current gain for this device is 15 @ 5A 4V the vce saturation(Max) is 1V @ 1.6A, 8A the supplier device package of TO-220
BD543B-S Applications
There are a lot of Bourns Inc. BD543B-S applications of single BJT transistors.