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KSD288OTU

KSD288OTU

KSD288OTU

ON Semiconductor

KSD288OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD288OTU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSD288
Power - Max 25W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 5V
Current - Collector Cutoff (Max) 50μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 55V
Current - Collector (Ic) (Max) 3A
KSD288OTU Product Details

KSD288OTU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 70 @ 500mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 100mA, 1A.This product comes in a TO-220-3 device package from the supplier.The device has a 55V maximal voltage - Collector Emitter Breakdown.

KSD288OTU Features


the DC current gain for this device is 70 @ 500mA 5V
the vce saturation(Max) is 1V @ 100mA, 1A
the supplier device package of TO-220-3

KSD288OTU Applications


There are a lot of ON Semiconductor KSD288OTU applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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