FJD5555TM Overview
This device has a DC current gain of 20 @ 800mA 3V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 1A, 3.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 14V.The breakdown input voltage is 400V volts.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
FJD5555TM Features
the DC current gain for this device is 20 @ 800mA 3V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 14V
FJD5555TM Applications
There are a lot of ON Semiconductor FJD5555TM applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
