BC856AW-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available on our website
SOT-23
BC856AW-G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
TIN
Subcategory
Other Transistors
Max Power Dissipation
150mW
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Configuration
Single
Power - Max
150mW
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
650mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Transition Frequency
100MHz
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.035359
$0.035359
500
$0.025999
$12.9995
1000
$0.021666
$21.666
2000
$0.019877
$39.754
5000
$0.018577
$92.885
10000
$0.017281
$172.81
15000
$0.016713
$250.695
50000
$0.016433
$821.65
BC856AW-G Product Details
BC856AW-G Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 100mA volts.
BC856AW-G Features
the DC current gain for this device is 220 @ 2mA 5V the vce saturation(Max) is 650mV @ 5mA, 100mA a transition frequency of 100MHz
BC856AW-G Applications
There are a lot of Comchip Technology BC856AW-G applications of single BJT transistors.