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PMBT2907AQAZ

PMBT2907AQAZ

PMBT2907AQAZ

Nexperia USA Inc.

PMBT2907AQAZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PMBT2907AQAZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 3-XDFN Exposed Pad
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 325mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 600mA
Frequency - Transition 210MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $0.06248 $0.3124
10,000 $0.05406 $0.5406
25,000 $0.05126 $1.2815
50,000 $0.04845 $2.4225
125,000 $0.04284 $5.355
PMBT2907AQAZ Product Details

PMBT2907AQAZ Overview


In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 60V maximal voltage is present.

PMBT2907AQAZ Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA

PMBT2907AQAZ Applications


There are a lot of Nexperia USA Inc. PMBT2907AQAZ applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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