FJN3301RTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJN3301RTA Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code
8541.21.00.95
Subcategory
BIP General Purpose Small Signal
Voltage - Rated DC
50V
Max Power Dissipation
300mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
100mA
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 10mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
250MHz
Max Breakdown Voltage
50V
Frequency - Transition
250MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
10V
hFE Min
20
Continuous Collector Current
100mA
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.096160
$0.09616
500
$0.070706
$35.353
1000
$0.058922
$58.922
2000
$0.054056
$108.112
5000
$0.050520
$252.6
10000
$0.046995
$469.95
15000
$0.045450
$681.75
50000
$0.044690
$2234.5
FJN3301RTA Product Details
FJN3301RTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 10mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 500μA, 10mA.For high efficiency, the continuous collector voltage must be kept at 100mA.Keeping the emitter base voltage at 10V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).In the part, the transition frequency is 250MHz.There is a breakdown input voltage of 50V volts that it can take.A maximum collector current of 100mA volts is possible.
FJN3301RTA Features
the DC current gain for this device is 20 @ 10mA 5V the vce saturation(Max) is 300mV @ 500μA, 10mA the emitter base voltage is kept at 10V the current rating of this device is 100mA a transition frequency of 250MHz
FJN3301RTA Applications
There are a lot of ON Semiconductor FJN3301RTA applications of single BJT transistors.