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FJN3301RTA

FJN3301RTA

FJN3301RTA

ON Semiconductor

FJN3301RTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJN3301RTA Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.95
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 300mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 100mA
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 10V
hFE Min 20
Continuous Collector Current 100mA
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.096160 $0.09616
500 $0.070706 $35.353
1000 $0.058922 $58.922
2000 $0.054056 $108.112
5000 $0.050520 $252.6
10000 $0.046995 $469.95
15000 $0.045450 $681.75
50000 $0.044690 $2234.5
FJN3301RTA Product Details

FJN3301RTA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 10mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 500μA, 10mA.For high efficiency, the continuous collector voltage must be kept at 100mA.Keeping the emitter base voltage at 10V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).In the part, the transition frequency is 250MHz.There is a breakdown input voltage of 50V volts that it can take.A maximum collector current of 100mA volts is possible.

FJN3301RTA Features


the DC current gain for this device is 20 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA
a transition frequency of 250MHz

FJN3301RTA Applications


There are a lot of ON Semiconductor FJN3301RTA applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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