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FJP13007H2TU-F080

FJP13007H2TU-F080

FJP13007H2TU-F080

ON Semiconductor

FJP13007H2TU-F080 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJP13007H2TU-F080 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Power - Max 80W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 2A 5V
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 8A
Transition Frequency 4MHz
Frequency - Transition 4MHz
Power Dissipation-Max (Abs) 80W
RoHS Status RoHS Compliant
FJP13007H2TU-F080 Product Details

FJP13007H2TU-F080 Overview


In this device, the DC current gain is 8 @ 2A 5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 2A, 8A.A transition frequency of 4MHz is present in the part.The device exhibits a collector-emitter breakdown at 400V.

FJP13007H2TU-F080 Features


the DC current gain for this device is 8 @ 2A 5V
the vce saturation(Max) is 3V @ 2A, 8A
a transition frequency of 4MHz

FJP13007H2TU-F080 Applications


There are a lot of ON Semiconductor FJP13007H2TU-F080 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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