FJP13007H2TU-F080 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJP13007H2TU-F080 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE
Power - Max
80W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 2A 5V
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
8A
Transition Frequency
4MHz
Frequency - Transition
4MHz
Power Dissipation-Max (Abs)
80W
RoHS Status
RoHS Compliant
FJP13007H2TU-F080 Product Details
FJP13007H2TU-F080 Overview
In this device, the DC current gain is 8 @ 2A 5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 2A, 8A.A transition frequency of 4MHz is present in the part.The device exhibits a collector-emitter breakdown at 400V.
FJP13007H2TU-F080 Features
the DC current gain for this device is 8 @ 2A 5V the vce saturation(Max) is 3V @ 2A, 8A a transition frequency of 4MHz
FJP13007H2TU-F080 Applications
There are a lot of ON Semiconductor FJP13007H2TU-F080 applications of single BJT transistors.