FJP13009H2 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJP13009H2 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
FJP13009
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
100W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 5A 5V
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 3A, 12A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
12A
Transition Frequency
4MHz
Frequency - Transition
4MHz
Power Dissipation-Max (Abs)
100W
FJP13009H2 Product Details
FJP13009H2 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 5A 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 3A, 12A.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Detection of Collector Emitter Breakdown at 400V maximal voltage is present.
FJP13009H2 Features
the DC current gain for this device is 15 @ 5A 5V the vce saturation(Max) is 3V @ 3A, 12A a transition frequency of 4MHz
FJP13009H2 Applications
There are a lot of ON Semiconductor FJP13009H2 applications of single BJT transistors.