FJP1943OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJP1943OTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-50°C~150°C TJ
Packaging
Tube
Published
2016
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
80W
Frequency
30MHz
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Element Configuration
Single
Power Dissipation
80W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
30MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
3V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1A 5V
Current - Collector Cutoff (Max)
5μA ICBO
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 8A
Collector Emitter Breakdown Voltage
230V
Transition Frequency
30MHz
Collector Base Voltage (VCBO)
-230V
Emitter Base Voltage (VEBO)
-5V
hFE Min
55
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.890994
$0.890994
10
$0.840560
$8.4056
100
$0.792981
$79.2981
500
$0.748095
$374.0475
1000
$0.705750
$705.75
FJP1943OTU Product Details
FJP1943OTU Overview
This device has a DC current gain of 80 @ 1A 5V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 800mA, 8A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.The part has a transition frequency of 30MHz.A maximum collector current of 15A volts is possible.
FJP1943OTU Features
the DC current gain for this device is 80 @ 1A 5V the vce saturation(Max) is 3V @ 800mA, 8A the emitter base voltage is kept at -5V a transition frequency of 30MHz
FJP1943OTU Applications
There are a lot of ON Semiconductor FJP1943OTU applications of single BJT transistors.