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FJP3305H1TU

FJP3305H1TU

FJP3305H1TU

ON Semiconductor

FJP3305H1TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJP3305H1TU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2008
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 700V
Max Power Dissipation 75W
Current Rating 4A
Frequency 4MHz
Base Part Number FJP3305
Number of Elements 1
Element Configuration Single
Power Dissipation 75W
Transistor Application SWITCHING
Gain Bandwidth Product 4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 2A 5V
Current - Collector Cutoff (Max) 1μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 4A
Collector Emitter Breakdown Voltage 400V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
hFE Min 8
Height 16.51mm
Length 10.67mm
Width 4.83mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.454104 $0.454104
10 $0.428400 $4.284
100 $0.404151 $40.4151
500 $0.381274 $190.637
1000 $0.359693 $359.693
FJP3305H1TU Product Details

FJP3305H1TU Overview


This device has a DC current gain of 8 @ 2A 5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 1A, 4A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 4MHz in the part.A maximum collector current of 4A volts is possible.

FJP3305H1TU Features


the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1A, 4A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
a transition frequency of 4MHz

FJP3305H1TU Applications


There are a lot of ON Semiconductor FJP3305H1TU applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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