2SC5663T2L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SC5663T2L Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-723
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Copper (Sn/Cu)
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
12V
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SC5663
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
150mW
Transistor Application
SWITCHING
Gain Bandwidth Product
320MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 10mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 200mA
Collector Emitter Breakdown Voltage
12V
Transition Frequency
320MHz
Collector Emitter Saturation Voltage
90mV
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
6V
hFE Min
270
Continuous Collector Current
500mA
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.167921
$0.167921
10
$0.158416
$1.58416
100
$0.149449
$14.9449
500
$0.140989
$70.4945
1000
$0.133009
$133.009
2SC5663T2L Product Details
2SC5663T2L Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 270 @ 10mA 2V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 90mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A 500mA continuous collector voltage is necessary to achieve high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 320MHz is present in the part.This device can take an input voltage of 12V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
2SC5663T2L Features
the DC current gain for this device is 270 @ 10mA 2V a collector emitter saturation voltage of 90mV the vce saturation(Max) is 250mV @ 10mA, 200mA the emitter base voltage is kept at 6V the current rating of this device is 500mA a transition frequency of 320MHz
2SC5663T2L Applications
There are a lot of ROHM Semiconductor 2SC5663T2L applications of single BJT transistors.