FJP5021OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJP5021OTU Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
500V
Max Power Dissipation
50W
Current Rating
5A
Frequency
18MHz
Base Part Number
FJP5021
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
50W
Power - Max
50W
Gain Bandwidth Product
18MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 600mA 5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 600mA, 3A
Collector Emitter Breakdown Voltage
500V
Voltage - Collector Emitter Breakdown (Max)
500V
Current - Collector (Ic) (Max)
5A
Frequency - Transition
18MHz
Collector Base Voltage (VCBO)
800V
Emitter Base Voltage (VEBO)
7V
hFE Min
15
RoHS Status
RoHS Compliant
Lead Free
Lead Free
FJP5021OTU Product Details
FJP5021OTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 600mA 5V.A VCE saturation (Max) of 1V @ 600mA, 3A means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 7V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.Product comes in TO-220-3 supplier package.This device displays a 500V maximum voltage - Collector Emitter Breakdown.In extreme cases, the collector current can be as low as 5A volts.
FJP5021OTU Features
the DC current gain for this device is 20 @ 600mA 5V the vce saturation(Max) is 1V @ 600mA, 3A the emitter base voltage is kept at 7V the current rating of this device is 5A the supplier device package of TO-220-3
FJP5021OTU Applications
There are a lot of ON Semiconductor FJP5021OTU applications of single BJT transistors.