FJP5027TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJP5027TU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
FJP5027
Power - Max
50W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 200mA 5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 300mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)
800V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
15MHz
FJP5027TU Product Details
FJP5027TU Overview
In this device, the DC current gain is 10 @ 200mA 5V, which is the ratio between the base current and the collector current.When VCE saturation is 2V @ 300mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Product package TO-220-3 comes from the supplier.This device displays a 800V maximum voltage - Collector Emitter Breakdown.
FJP5027TU Features
the DC current gain for this device is 10 @ 200mA 5V the vce saturation(Max) is 2V @ 300mA, 1.5A the supplier device package of TO-220-3
FJP5027TU Applications
There are a lot of ON Semiconductor FJP5027TU applications of single BJT transistors.