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FJP5027TU

FJP5027TU

FJP5027TU

ON Semiconductor

FJP5027TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJP5027TU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number FJP5027
Power - Max 50W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 200mA 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 300mA, 1.5A
Voltage - Collector Emitter Breakdown (Max) 800V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 15MHz
FJP5027TU Product Details

FJP5027TU Overview


In this device, the DC current gain is 10 @ 200mA 5V, which is the ratio between the base current and the collector current.When VCE saturation is 2V @ 300mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Product package TO-220-3 comes from the supplier.This device displays a 800V maximum voltage - Collector Emitter Breakdown.

FJP5027TU Features


the DC current gain for this device is 10 @ 200mA 5V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the supplier device package of TO-220-3

FJP5027TU Applications


There are a lot of ON Semiconductor FJP5027TU applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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