ESM6045DV datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
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ESM6045DV Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount, Panel, Screw
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Number of Pins
4
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
4
ECCN Code
EAR99
Subcategory
BIP General Purpose Power
Voltage - Rated DC
450V
Max Power Dissipation
250W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Current Rating
84A
Base Part Number
ESM6045
Pin Count
4
Number of Elements
1
Rise Time-Max
5500ns
Polarity
NPN
Element Configuration
Single
Power Dissipation
250W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
450V
Max Collector Current
84A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 70A 5V
Vce Saturation (Max) @ Ib, Ic
1.35V @ 4A, 70A
Collector Emitter Breakdown Voltage
450V
Collector Emitter Saturation Voltage
2V
Emitter Base Voltage (VEBO)
7V
hFE Min
120
VCEsat-Max
2 V
Fall Time-Max (tf)
500ns
Height
9.1mm
Length
38.2mm
Width
25.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
ESM6045DV Product Details
ESM6045DV Overview
In this device, the DC current gain is 120 @ 70A 5V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.35V @ 4A, 70A.The emitter base voltage can be kept at 7V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 84A current rating.Single BJT transistor is possible for the collector current to fall as low as 84A volts at Single BJT transistors maximum.
ESM6045DV Features
the DC current gain for this device is 120 @ 70A 5V a collector emitter saturation voltage of 2V the vce saturation(Max) is 1.35V @ 4A, 70A the emitter base voltage is kept at 7V the current rating of this device is 84A
ESM6045DV Applications
There are a lot of STMicroelectronics ESM6045DV applications of single BJT transistors.