2SA2090TLQ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 50mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -150mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.An emitter's base voltage can be kept at -6V to gain high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 400MHz in the part.A maximum collector current of 500mA volts can be achieved.
2SA2090TLQ Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -6V
the current rating of this device is -500mA
a transition frequency of 400MHz
2SA2090TLQ Applications
There are a lot of ROHM Semiconductor 2SA2090TLQ applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
