2SA2090TLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SA2090TLQ Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-96
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LOW NOISE
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
-500mA
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
400MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 50mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
60V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
400MHz
Collector Emitter Saturation Voltage
-150mV
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
-6V
hFE Min
120
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.151680
$4.15168
10
$3.916679
$39.16679
100
$3.694980
$369.498
500
$3.485831
$1742.9155
1000
$3.288519
$3288.519
2SA2090TLQ Product Details
2SA2090TLQ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 50mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -150mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.An emitter's base voltage can be kept at -6V to gain high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 400MHz in the part.A maximum collector current of 500mA volts can be achieved.
2SA2090TLQ Features
the DC current gain for this device is 120 @ 50mA 2V a collector emitter saturation voltage of -150mV the vce saturation(Max) is 300mV @ 10mA, 100mA the emitter base voltage is kept at -6V the current rating of this device is -500mA a transition frequency of 400MHz
2SA2090TLQ Applications
There are a lot of ROHM Semiconductor 2SA2090TLQ applications of single BJT transistors.