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2SA2090TLQ

2SA2090TLQ

2SA2090TLQ

ROHM Semiconductor

2SA2090TLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SA2090TLQ Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-96
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW NOISE
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -500mA
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 400MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 60V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 400MHz
Collector Emitter Saturation Voltage -150mV
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -6V
hFE Min 120
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.151680 $4.15168
10 $3.916679 $39.16679
100 $3.694980 $369.498
500 $3.485831 $1742.9155
1000 $3.288519 $3288.519
2SA2090TLQ Product Details

2SA2090TLQ Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 50mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -150mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.An emitter's base voltage can be kept at -6V to gain high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 400MHz in the part.A maximum collector current of 500mA volts can be achieved.

2SA2090TLQ Features


the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -6V
the current rating of this device is -500mA
a transition frequency of 400MHz

2SA2090TLQ Applications


There are a lot of ROHM Semiconductor 2SA2090TLQ applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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