FJV1845PMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJV1845PMTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Lifecycle Status
LIFETIME (Last Updated: 2 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
120V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
50mA
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
FJV1845
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
120V
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1mA 6V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
120V
Transition Frequency
110MHz
Collector Emitter Saturation Voltage
70mV
Max Breakdown Voltage
120V
Frequency - Transition
110MHz
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
hFE Min
200
Height
1.04mm
Length
2.9mm
Width
1.3mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.050048
$0.050048
500
$0.036800
$18.4
1000
$0.030667
$30.667
2000
$0.028135
$56.27
5000
$0.026294
$131.47
10000
$0.024460
$244.6
15000
$0.023655
$354.825
50000
$0.023260
$1163
FJV1845PMTF Product Details
FJV1845PMTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1mA 6V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 70mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 1mA, 10mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 50mA current rating.A transition frequency of 110MHz is present in the part.Breakdown input voltage is 120V volts.The maximum collector current is 50mA volts.
FJV1845PMTF Features
the DC current gain for this device is 200 @ 1mA 6V a collector emitter saturation voltage of 70mV the vce saturation(Max) is 300mV @ 1mA, 10mA the emitter base voltage is kept at 5V the current rating of this device is 50mA a transition frequency of 110MHz
FJV1845PMTF Applications
There are a lot of ON Semiconductor FJV1845PMTF applications of single BJT transistors.