FJV92MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJV92MTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 3 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Weight
30mg
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Max Power Dissipation
350mW
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Element Configuration
Single
Gain Bandwidth Product
50MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-350V
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 10V
Current - Collector Cutoff (Max)
250nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max)
350V
Current - Collector (Ic) (Max)
500mA
Collector Emitter Saturation Voltage
-500mV
Collector Base Voltage (VCBO)
-350V
Emitter Base Voltage (VEBO)
-5V
hFE Min
25
Continuous Collector Current
-500mA
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.401104
$0.401104
10
$0.378400
$3.784
100
$0.356981
$35.6981
500
$0.336775
$168.3875
1000
$0.317712
$317.712
FJV92MTF Product Details
FJV92MTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 10mA 10V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at -500mA in order to achieve high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.Detection of Collector Emitter Breakdown at 350V maximal voltage is present.
FJV92MTF Features
the DC current gain for this device is 40 @ 10mA 10V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 2mA, 20mA the emitter base voltage is kept at -5V
FJV92MTF Applications
There are a lot of ON Semiconductor FJV92MTF applications of single BJT transistors.