FMG1G75US60H datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available on our website
SOT-23
FMG1G75US60H Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
7PM-GA
Supplier Device Package
7PM-GA
Operating Temperature
-40°C~150°C TJ
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Configuration
Single
Power - Max
310W
Input
Standard
Current - Collector Cutoff (Max)
250μA
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
75A
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 75A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
7.056nF @ 30V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$36.00000
$36
500
$35.64
$17820
1000
$35.28
$35280
1500
$34.92
$52380
2000
$34.56
$69120
2500
$34.2
$85500
FMG1G75US60H Product Details
FMG1G75US60H Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.