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FZ1600R17HP4B21BOSA2

FZ1600R17HP4B21BOSA2

FZ1600R17HP4B21BOSA2

Infineon Technologies

FZ1600R17HP4B21BOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

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FZ1600R17HP4B21BOSA2 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Additional Feature UL APPROVED
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X7
Number of Elements 2
Configuration Half Bridge
Case Connection ISOLATED
Power - Max 10500W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 1600A
Turn On Time 690 ns
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 1600A
Turn Off Time-Nom (toff) 1710 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 130nF @ 25V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
2 $950.45500 $1900.91
FZ1600R17HP4B21BOSA2 Product Details

FZ1600R17HP4B21BOSA2 Description

 

FZ1600R17HP4B21BOSA2 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FZ1600R17HP4B21BOSA2 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

FZ1600R17HP4B21BOSA2 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

FZ1600R17HP4B21BOSA2 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display

 


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