FZ1600R17HP4B21BOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FZ1600R17HP4B21BOSA2 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Additional Feature
UL APPROVED
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X7
Number of Elements
2
Configuration
Half Bridge
Case Connection
ISOLATED
Power - Max
10500W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
1600A
Turn On Time
690 ns
Vce(on) (Max) @ Vge, Ic
2.25V @ 15V, 1600A
Turn Off Time-Nom (toff)
1710 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
130nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2
$950.45500
$1900.91
FZ1600R17HP4B21BOSA2 Product Details
FZ1600R17HP4B21BOSA2 Description
FZ1600R17HP4B21BOSA2 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FZ1600R17HP4B21BOSA2 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.