MIXA61H1200ED

new-10%

Manufacturer part number:MIXA61H1200ED

Manufacturer:IXYS

Description:IGBT Modules IGBT XPT Module H Bridge

Case Package:SOT-23

Datasheet:MIXA61H1200ED Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	E2
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C TJ
Packaging	Bulk
Published	2011
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	290W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
JESD-30 Code	R-XUFM-X12
Number of Elements	4
Configuration	Full Bridge Inverter
Power Dissipation	290W
Case Connection	ISOLATED
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	85A
Current - Collector Cutoff (Max)	500μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	1.8V
Turn On Time	110 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 55A
Turn Off Time-Nom (toff)	350 ns
IGBT Type	PT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
RoHS Status	ROHS3 Compliant