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IPW65R045C7FKSA1

IPW65R045C7FKSA1

IPW65R045C7FKSA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 45m Ω @ 24.9A, 10V ±20V 4340pF @ 400V 93nC @ 10V TO-247-3

SOT-23

IPW65R045C7FKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series CoolMOS™ C7
Published 2008
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 227W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation227W
Case Connection DRAIN
Turn On Delay Time20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 24.9A, 10V
Vgs(th) (Max) @ Id 4V @ 1.25mA
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 400V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Rise Time14ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 82 ns
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage650V
Drain-source On Resistance-Max 0.045Ohm
Drain to Source Breakdown Voltage 650V
Avalanche Energy Rating (Eas) 249 mJ
Max Junction Temperature (Tj) 150°C
Height 25.4mm
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:515 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$13.19000$13.19
10$12.07700$120.77
240$10.40921$2498.2104
720$9.01961$6494.1192

IPW65R045C7FKSA1 Product Details

IPW65R045C7FKSA1 Description

IPW65R045C7FKSA1 MOSFET is built on well-established silicon processes that provides low switching losses, efficiency improvements over the full load range. IPW65R045C7FKSA1 power MOSFET is available in various through-hole and surface-mount packages with standard footprints for designing. Infineon Technologies IPW65R045C7FKSA1 is utilized in Server, Telecom, HID lamp ballast, LED lighting.

IPW65R045C7FKSA1 Features

Lower gate charge Qg

Space saving through use of smaller packages or reduction of parts

Revolutionary best-in-class R DS(on)/package

Excellent superjunction technology experience

Reduced energy stored in output capacitance


IPW65R045C7FKSA1 Applications

Telecom

Server

Solar

HID lamp ballast

LED lighting


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