IRF9540NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRF9540NPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
1998
Series
HEXFET®
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
117mOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
250
Current Rating
-23A
[email protected] Reflow Temperature-Max (s)
30
Lead Pitch
2.54mm
Number of Elements
1
Power Dissipation-Max
140W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
140W
Case Connection
DRAIN
Turn On Delay Time
15 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
117m Ω @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
23A Tc
Gate Charge (Qg) (Max) @ Vgs
97nC @ 10V
Rise Time
67ns
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
51 ns
Turn-Off Delay Time
51 ns
Continuous Drain Current (ID)
-23A
Threshold Voltage
-4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-100V
Pulsed Drain Current-Max (IDM)
76A
Dual Supply Voltage
-100V
Recovery Time
220 ns
Nominal Vgs
-4 V
Height
15.24mm
Length
10.5156mm
Width
4.69mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.36000
$1.36
10
$1.21500
$12.15
100
$0.97370
$97.37
500
$0.76950
$384.75
1,000
$0.62101
$0.62101
IRF9540NPBF Product Details
IRF9540NPBF Discription Advanced technology IRF9540NPBF to achieve extremely low on-resistance per silicon area, which, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with extremely efficient and reliable devices that can be used in a variety of applications. TO-220 package is the first choice for all commercial industrial applications, with a power consumption level of about 50 watts. TO-220 is widely accepted throughout the industry because of its low thermal resistance and low packaging cost. IRF9540NPBF Feature: Lead-Free Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated IRF9540NPBF Application commercial industrial applications