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FQA12P20

FQA12P20

FQA12P20

ON Semiconductor

FQA12P20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQA12P20 Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Supplier Device Package TO-3P
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -200V
Technology MOSFET (Metal Oxide)
Current Rating -12.6A
Number of Elements 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Power Dissipation 150W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 470mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12.6A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 195ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 12.6A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage -200V
Input Capacitance 1.2nF
Drain to Source Resistance 470mOhm
Rds On Max 470 mΩ
RoHS Status RoHS Compliant
Lead Free Lead Free
FQA12P20 Product Details

FQA12P20 Description


The FQA12P20 P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. 



FQA12P20 Features


  • 100% avalanche tested

  • RoHS Compliant

  • -11.5A, -200V, RDS(on) = 470mΩ(Max.) @VGS = -10 V, ID = -5.75A

  • Low gate charge ( Typ. 31nC)

  • Low Crss ( Typ. 30pF)



FQA12P20 Applications


  • Other Industrial


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