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SPI20N60CFDHKSA1

SPI20N60CFDHKSA1

SPI20N60CFDHKSA1

Infineon Technologies

Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-262

SOT-23

SPI20N60CFDHKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 208W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 220m Ω @ 13.1A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20.7A Tc
Gate Charge (Qg) (Max) @ Vgs 124nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.4 ns
Turn-Off Delay Time 59 ns
Continuous Drain Current (ID) 20.7A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.22Ohm
Pulsed Drain Current-Max (IDM) 52A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 690 mJ
Radiation Hardening No
RoHS Status RoHS Compliant

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