FQA17P10

new-10%

Manufacturer part number:FQA17P10

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 100V 18A TO-3P

Case Package:SOT-23

Datasheet:FQA17P10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Supplier Device Package	TO-3P
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2002
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	-100V
Technology	MOSFET (Metal Oxide)
Current Rating	-18A
Power Dissipation-Max	120W Tc
Element Configuration	Single
Power Dissipation	120W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18A Tc
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Rise Time	200ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	18A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	-100V
Input Capacitance	1.1nF
Drain to Source Resistance	190mOhm
Rds On Max	190 mΩ
RoHS Status	RoHS Compliant
Lead Free	Lead Free