FQA16N25C

join

new-10%

Manufacturer part number:FQA16N25C

Manufacturer:ON Semiconductor

Description:FQA16N25C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQA16N25C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	180W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	270mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1080pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17.8A Tc
Gate Charge (Qg) (Max) @ Vgs	53.5nC @ 10V
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V

Quantity	Unit Price	Ext. Price
1	$19.529564	$19.529564
10	$18.424117	$184.24117
100	$17.381243	$1738.1243
500	$16.397398	$8198.699
1000	$15.469244	$15469.244

FQA16N25C Description

The planar stripe, DMOS technology developed by Fairchild is used to create FQA16N25C N-Channel enhancement mode power field effect transistors.

In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high-energy pulses. These gadgets are ideal for switch mode power supplies, DC-AC converters for continuous power supply, high-efficiency switching DC/DC converters, motor controllers, and other similar applications.