FQA18N50V2

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Manufacturer part number:FQA18N50V2

Manufacturer:ON Semiconductor

Description:FQA18N50V2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQA18N50V2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Supplier Device Package	TO-3P
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2002
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	20A
Power Dissipation-Max	277W Tc
Element Configuration	Single
Power Dissipation	277W
Turn On Delay Time	40 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	265mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3290pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Rise Time	150ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	110 ns
Turn-Off Delay Time	95 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Input Capacitance	3.29nF
Drain to Source Resistance	265mOhm
Rds On Max	265 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free