FQA19N60

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Manufacturer part number:FQA19N60

Manufacturer:ON Semiconductor

Description:FQA19N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQA19N60 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Current Rating	18.5A
Number of Elements	1
Voltage	600V
Power Dissipation-Max	300W Tc
Element Configuration	Single
Current	16A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Turn On Delay Time	65 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	380m Ω @ 9.3A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18.5A Tc
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Rise Time	210ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	135 ns
Turn-Off Delay Time	150 ns
Continuous Drain Current (ID)	18.5A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Avalanche Energy Rating (Eas)	1150 mJ
Height	18.9mm
Length	15.8mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free