AUIRFR3504Z

new-10%

Manufacturer part number:AUIRFR3504Z

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 42A DPAK

Case Package:SOT-23

Datasheet:AUIRFR3504Z Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	39 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	2
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Power Dissipation-Max	90W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	90W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9m Ω @ 42A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1510pF @ 25V
Current - Continuous Drain (Id) @ 25°C	42A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	74ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	42A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.009Ohm
Drain to Source Breakdown Voltage	40V
Avalanche Energy Rating (Eas)	77 mJ
Height	2.3876mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant