FQD1N50TM

new-10%

Manufacturer part number:FQD1N50TM

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 500V 1.1A DPAK

Case Package:SOT-23

Datasheet:FQD1N50TM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2000
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	1.1A
Power Dissipation-Max	2.5W Ta 25W Tc
Element Configuration	Single
Power Dissipation	2.5W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	9 Ω @ 550mA, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.1A Tc
Gate Charge (Qg) (Max) @ Vgs	5.5nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	8 ns
Continuous Drain Current (ID)	1.1A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
RoHS Status	RoHS Compliant
Lead Free	Lead Free