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FQA34N20

  • FQA34N20
  • FQA34N20

FQA34N20

FQA34N20

ON Semiconductor

FQA34N20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQA34N20 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 210W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 75mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
FQA34N20 Product Details

FQA34N20 Description


FQA34N20 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 200V. The operating temperature of the FQA34N20 is -55°C~150°C TJ and its maximum power dissipation is 210W Tc. FQA34N20 has 3 pins and it is available in Tube packaging way.



FQA34N20 Features


  • High voltage and high reliability

  • High speed switching

  • Low forward voltage



FQA34N20 Applications


  • General purpose

  • Switching mode power supply

  • Free-wheeling diode for motor application

  • Power switching circuits


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