FQA34N20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQA34N20 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Series
QFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
210W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
75mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3100pF @ 25V
Current - Continuous Drain (Id) @ 25°C
34A Tc
Gate Charge (Qg) (Max) @ Vgs
78nC @ 10V
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
In-Stock:4378 items
FQA34N20 Product Details
FQA34N20 Description
FQA34N20 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 200V. The operating temperature of the FQA34N20 is -55°C~150°C TJ and its maximum power dissipation is 210W Tc. FQA34N20 has 3 pins and it is available in Tube packaging way.
FQA34N20 Features
High voltage and high reliability
High speed switching
Low forward voltage
FQA34N20 Applications
General purpose
Switching mode power supply
Free-wheeling diode for motor application
Power switching circuits
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