FQA7N80C-F109 Description

The planar stripe and DMOS technologies exclusive to ON Semiconductor were used to create this N-Channel enhancement mode power MOSFET. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. Switched mode power supply, active power factor correction (PFC), and electronic lamp ballasts are all compatible with these products.

FQA7N80C-F109 Features

7.0 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.5 A

Low Gate Charge (Typ. 27nC)

Low Crss (Typ. 10pF)

100% Avalanche Tested

RoHS Compliant

FQA7N80C-F109 Applications

Temperature Measurement

Pressure Measurement

Flow Meters

Factory Automation and Process Control