FQA9N50

new-10%

Manufacturer part number:FQA9N50

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 500V 9.6A TO-3P

Case Package:SOT-23

Datasheet:FQA9N50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Supplier Device Package	TO-3P
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	9.6A
Power Dissipation-Max	160W Tc
Element Configuration	Single
Power Dissipation	160W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	730mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1450pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.6A Tc
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Rise Time	95ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	9.6A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Input Capacitance	1.45nF
Drain to Source Resistance	730mOhm
Rds On Max	730 mΩ
RoHS Status	RoHS Compliant
Lead Free	Lead Free