FQB10N20CTM

new-10%

Manufacturer part number:FQB10N20CTM

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 200V 9.5A D2PAK

Case Package:SOT-23

Datasheet:FQB10N20CTM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	D2PAK (TO-263AB)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Current Rating	9.5A
Number of Elements	1
Power Dissipation-Max	72W Tc
Element Configuration	Single
Power Dissipation	72W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	360mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	510pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.5A Tc
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Rise Time	92ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	72 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	9.5A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	200V
Input Capacitance	510pF
Drain to Source Resistance	290mOhm
Rds On Max	360 mΩ
RoHS Status	RoHS Compliant
Lead Free	Lead Free