SI4886DY-T1-E3

new-10%

Manufacturer part number:SI4886DY-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 9.5A 8-SOIC

Case Package:SOT-23

Datasheet:SI4886DY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.56W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.56W
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10m Ω @ 13A, 10V
Vgs(th) (Max) @ Id	800mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	9.5A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 5V
Rise Time	5ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	42 ns
Continuous Drain Current (ID)	13A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9.5A
DS Breakdown Voltage-Min	30V
Nominal Vgs	800 mV
Height	1.55mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant