IXFN20N120

new-10%

Manufacturer part number:IXFN20N120

Manufacturer:IXYS

Description:MOSFET N-CH 1200V 20A SOT-227B

Case Package:SOT-23

Datasheet:IXFN20N120 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	HiPerFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	780W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	780W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	750m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	7400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Rise Time	45ns
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.75Ohm
Drain to Source Breakdown Voltage	1.2kV
Pulsed Drain Current-Max (IDM)	80A
Avalanche Energy Rating (Eas)	2000 mJ
RoHS Status	ROHS3 Compliant